KSM5800 features ?r ds(on) = 4.6m ? (typ.), v gs = 10v, i d = 80a ? high performance trench technol ogy for extermly low rdson ? low gate charge ? high power and current handing capability ?rohs compliant applications ? motor/ body load control ? power train management ? injection systems ? dc-ac converters and ups to-220 d g s mosfet maximum ratings t c = 25c unless otherwise noted* thermal characteristics package marking and ordering information symbol parameter ratings units v dss drain-source voltage 60 v v gss gate-source voltage 20 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 80 a -continuous (t c = 100 o c) a 80* -continuous (t a = 25 o c) 14 a i dm drain current - pulsed 320 a e as single pulsed avalanche energy (note 1) 652 mj p d power dissipation (t c = 25 o c) - derate above 25 o c 242 1.61 w w/ c t j , t stg operating and storage temperature range -55 to +175 c r jc thermal resistance , junction to case 0.62 c/w r ja thermal resistance , junction to ambient, 1in 2 copper pad area 43 c/w r ja thermal resistance , junction to ambient 62.5 c/w device marking device package reel size tape width quantity ksm580 KSM5800 to220 -- -- 50 *drain current limited by package 2014-7-1 1 www.kersemi.com
t c = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics (v gs = 10v) drain-source diod e characteristics symbol parameter conditions min typ max units b vdss drain-source breakdown voltage i d = 250 a, v gs = 0v, t j =25 o c60 -- --v i dss zero gate voltage drain current v ds = 48v v gs = 0v -- -- 1 a t j = 150 c -- -- 500 a i gss gate-body leakage current, forward v gs = 20v, v ds = 0v -- -- 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a1.0--2.5v r ds(on) static drain-source on resistance v gs = 10v , i d = 80a -- 4.6 6.0 m ? v gs =4.5v , i d = 80a -- 5.9 7.2 m ? v gs = 5v , i d = 80a -- 5.6 7.0 m ? v gs =10v, i d = 80a t j = 175 o c -- 10.4 12.6 m ? c iss input capacitance v ds = 15v,v gs = 0v f = 1mhz -- 6890 9160 pf c oss output capacitance -- 750 1000 pf c rss reverse transfer capacitance -- 295 445 pf r g gate resistance v gs = 0.5v, f = 1mhz -- 1.2 -- ? q g(tot) total gate charge at 10v v gs = 0v to 10v v ds = 30v i d = 80a i g = 1ma -- 112 145 nc q g(th) total gate charge at 5v v gs = 0v to 5v -- 58 -- nc q g(th) threshold gate charge v gs = 0v to 1v -- 7.0 -- nc q gs gate to source gate charge -- 23 -- nc q gs2 gate charge threshold to plateau -- 13 -- nc q gd gate to drain ?miller? charge -- 18 -- nc t on turn-on time v dd = 30v, i d = 80a v gs = 10v, r gen = 1.5 ? -- 37 85 ns t d(on) turn-on delay time -- 18 46 ns t r turn-on rise time -- 19 47 ns t d(off) turn-off delay time -- 55 120 ns t f turn-off fall time -- 9 28 ns t off turn-off time -- 64 138 ns v sd drain-source diode forward voltage v gs = 0v, i sd = 80a -- -- 1.25 v v gs = 0v, i sd = 40a -- -- 1.0 v t rr reverse recovery time v gs = 0v, i sd = 60a di f /dt = 100a/ s -- 58 -- ns q rr reverse recovery charge -- 106 -- nc notes: 1: l = 1mh, i as = 36a, v dd = 54v, v gs = 10v, r g = 25 ? , starting t j = 25 o c electrical characteristics KSM5800 2014-7-1 2 www.kersemi.com
typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 100 3 0.03 400 * notes : 1. 250 s pulse test 2. t c = 25 o c v gs top : 10.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v i d ,drain current[a] v ds ,drain-source voltage[v] 5 12345 0.1 1 10 100 1000 150 o c -55 o c 25 o c i d ,drain current[a] v gs ,gate-source voltage[v] v ds = 6v 0 40 80 120 160 200 4.0 4.5 5.0 5.5 * note : t j = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ? ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000 v gs = 0v 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 10 -1 10 0 10 1 1500 3000 4500 6000 7500 9000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd * note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 100 30 0 20406080100120 0 2 4 6 8 10 * note : i d = 80a v ds = 25v v ds = 35v v ds = 50v v gs , gate-source voltage [v] q g , total gate charge [nc] KSM5800 2014-7-1 3 www.kersemi.com
typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 2.4 * notes : 1. v gs = 10v 2. i d = 80a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 10 0 10 1 10 2 10 0 10 1 10 2 10 3 20 s 100 s 1ms 10ms dc operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 175 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 175 0 25 50 75 100 125 current limited by package i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 1e-3 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * notes : 1. z jc (t) = 0.62 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z jc (t) d = 0.5 single pulse z jc (t),thermal response t 1 , square wave pulse duration [sec] t 1 p dm t 2 KSM5800 2014-7-1 4 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms KSM5800 2014-7-1 5 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( d u t ) v ds ( dut ) v dd b ody d iode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g ate p ulse w idth g ate pulse period -------------------------- d = g ate p ulse w idth g ate pulse period -------------------------- KSM5800 2014-7-1 6 www.kersemi.com
mechanical dimensions 4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?3.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?0.05 0.50 +0.10 ?0.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 KSM5800 2014-7-1 7 www.kersemi.com
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